مجال التميز
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تميز دراسي وبحثي
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البحوث المنشورة
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البحث (1):
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عنوان البحث:
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Two Terminal Non-volatile
Memory Devices using Diamond-like Carbon and Silicon Nanostructures
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رابط إلى البحث:
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Click here
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تاريخ النشر:
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31/10/2014
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موجز عن البحث:
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This work illustrates a novel device for storing electronic charge and
works as a non-volatile memory device. It is fabricated using an industrial
technique and consists of silicon nanostructures and diamond like carbon
(DLC) as a memory element and an ultra-thin barrier layer respectively. Both
the silicon nanostructures and the DLC have been deposited by plasma enhanced
chemical vapour deposition (PECVD) technique. The nanostructures are
sandwiched between two DLC layers. To understand the ability of silicon
nanostructures to store electronic charge current voltage (I-V) and
current-time (I-t) measurements were carried out. The memory effect is noted
as the difference between the two electrical conductivity states (low ‘‘0’’
and high ‘‘1’’).
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البحث (2):
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عنوان البحث:
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Creating
Electrical Bistability Using Nano-bits – Application in 2-Terminal Memory
Devices
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رابط إلى البحث:
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Click
here
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تاريخ النشر:
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12/01/2017
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موجز عن البحث:
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Intensive research is currently
underway to exploit the highly interesting properties of nano-bits
(“nano-sized particles and molecules”) for optical, electronic and other
applications. The basis of these unique properties is the small-size of these
structures which result in quantum mechanical phenomena and interesting
surface properties. The small molecules and/or nano-particles are selected in
such a way so that it can create an internal electric in the nano-composite.
We define a nanocomposite is an admixture of small molecules and/or
nano-particles and a polymer. We have demonstrated the internal electric
field in our devices, made from nano-bits (nano-particles and/or molecules)
and insulating materials, can contribute to the electrical bistability i.e.
two conductive states.
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البحث (3):
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عنوان البحث:
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A Study
Of Selenium Nanoparticles As Charge Storage Element For Flexible
Semi-Transparent Memory Devices
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رابط إلى البحث:
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Click
here
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تاريخ النشر:
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10 March 2017
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موجز عن البحث:
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Flexible
Semi-Transparent electronic memory would be useful in coming years for
integrated flexible transparent electronic devices. However, attaining such
flexibility and semi-transparency leads to the boundaries in material
composition. Thus, impeding processing speed and device performance. In this
work, we present the use of inorganic stable selenium nanoparticles (Se-NPs)
as a storage element and hydrogenated amorphous carbon (a-C:H) as an
insulating layer in two terminal non-volatile physically flexible and semi-transparent
capacitive memory devices (2T-NMDs). Furthermore, a-C:H films can be
deposited at very low temperature (<40° C) on a variety of substrates
(including many kinds of plastic substrates) by an industrial technique
called Plasma Enhanced Chemical Vapour Deposition (PECVD) which is available
in many existing fabrication labs. Self-assembled Se-NPs has several unique
features including deposition at room temperature by simple vacuum thermal
evaporation process without the need for further optimisation. This
facilitates the fabrication of memory on a flexible substrate. Moreover, the
memory behaviour of the Se-NPs was found to be more distinct than those of
the semiconductor and metal nanostructures due to higher work function
compared to the commonly used semiconductor and metal species. The memory
behaviour was observed from the hysteresis of current-voltage (I–V)
measurements while the two distinguishable electrical conductivity states
(“0” and “1”) were studied by current-time (I–t) measurements.
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المؤتمرات العلمية:
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المؤتمر (1):
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عنوان المؤتمر:
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2nd SAUDI INTERNATIONAL NANOTECHNOLOGY
CONFERENCE (2SINC) 2012
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تاريخ الإنعقاد:
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November 2012
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بلد ومكان
الإنعقاد:
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Riyadh, Saudi Arabia
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طبيعة المشاركة:
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Oral Presentation
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عنوان المشاركة:
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Two Terminal Electronic
Memory Deviceusing Nano-structures (TTEMD using SiNWs)
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الملخص:
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During my presentation I demonstrated the working
mechanism of a new type of non-volatile memory based on Silicon nanowires. At
the conference, SEM images of nanowires, methods of fabrication and the
electrical measurements showing the function of the memory are presented.
The memory devices have the following structure:
a bottom and top metal contact (Al), two dielectric layers (Si3N4)
and silicon nano-structures sandwiched between those layers as the storage
element. The memory effect is observed as the difference between two
electrical conductivity states (low ‘‘0’’ and high ‘‘1’’)
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المؤتمر (2):
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عنوان المؤتمر:
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CIMTEC 2014 6th
FORUM ON NEW MATERIALS
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تاريخ الإنعقاد:
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15/07/2014
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مكان الإنعقاد:
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Italy
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طبيعة المشاركة:
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Poster
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عنوان المشاركة:
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Two Terminal Non-volatile
Memory Devices using Diamond-like Carbon and Silicon Nanostructures
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ملخص المشاركة:
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The main aim of this work to fabricate reliable non-volatile memory
device, This memory is based on metal-insulator-nanoparticles-insulator-metal
by incorporating a low temperature (< 400 C); Nanostructures will be used
as storage elements in the memory. Moreover, through understanding the
deposition parameter and properties of diamond like carbon, this will be used
as interlayer dielectric material in the memory devices, because DLC is a
low-k material.
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المؤتمر (3):
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عنوان المؤتمر:
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8TH SAUDI STUDENTS’
CONFERENCE IN THE UK
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تاريخ الإنعقاد:
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31/01/2015
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مكان الإنعقاد:
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London, UK
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طبيعة المشاركة:
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Oral Presentation
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عنوان المشاركة:
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A Study In Pursuit Of
Precise Substrate Selection For Infrared Spectroscopy Analysis Of Diamond-Like
Carbon
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ملخص المشاركة:
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The applications of
diamond-like carbon thin films to electronic devices have been of
considerable interest over last two decades [1-3]. Properties such as a low
dielectric constant (which implies higher switching speed), bandgap
tailoring, high breakdown strength and deposition at room temperature, make
this material useful for cheap, glass and plastic compatible technologies.
One very widely used class of device that could benefit from these properties
is the emerging two terminal memory devices [4]. Diamond-like carbon is a
mixture of various allotropes carbon; predominately made of sp 3 and sp2 with
hydrogen stabilising the dangling band. The electrical and optical properties
of DLC are mainly determined by sp3 /sp2 ratio and present of hydrogen in diamond-like
carbon. A number of methods has been employed to understand the sp3 /sp2
ratio and amount of hydrogen in DLC, for examples; Raman analysis of sp3 /sp2
ratio and Rutherford backscattering and infrared spectrscopy for estimation
of hydrogen. The information on aforementioned are fundamental to fabricate
electronic devices. The information on various types of bonds among carbon
atoms and attachment of hydrogen (bound and unbound hydrogen) to them in DLC
plays an important role in determining the electrical and optical properties.
A key parameter in device performance is the density of states (DOS) and the
DOS can be greatly influenced by the carbon-carbon bonds (single, double,
triple, pi, sigma) and presence of hydrogen. A commonly used technique to understand
the nature of such bonds in DLC films, is that of Infra Red spectroscopy. A
freestanding film of DLC would be an ideal source for any infra-red
investigation; the substrate may have in distorting vital information about
the film properties. However, it is very difficult to prepare a free standing
DLC film. Paul, S has demonstrated the use of quartz substrate [5], for
infrared analysis of DLC films, is a better choice than a commonly used low
p-type doped Si substrate. The quartz substrate allows a high transparency to
infra-red rays of wavelengths of interest. Manjunathan et al have recently
investigated a number of substrates for infrared transparency [6]. The study
utilise the information presented infrared transparency various substrates by
Manjunatha et al [6] for FTIR analysis of DLC and; if improved information,
in regard to the nature of bonds in present in DLC, can be obtained using
different substrates. Diamond like carbon films were deposited by
Plasma-enhanced chemical vapour deposition (PECVD) from Ar and CH4 gas
mixture with different values of the dc self-bias, on different substrates
(quartz, p-type silicon and sapphire). Infrared spectroscopy is used to
characterise the vibrations modes of various bonds present in DLC. The detail
analysis of infrared absorption data and suitability of the substrate(s) for
infrared analysis of DLC will be presented. References 1. W.I Milne, W.I.
2003, Semiconductor Science and Technology, vol. 18, (20
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