منال محمد أحمد الحازمي

الاسم الاول: 
منال
اسم العائلة: 
الحازمي
الدرجة العلمية: 
دكتوراة
مجال الدراسة: 
العلوم والتقنية
المؤسسة التعليمية: 
University of Manchester

 

 

مجال التميز

تميز دراسي وبحثي 

 

 

البحوث المنشورة

 

البحث (1):

 

عنوان البحث:

Graphene Hot-Electron Light Bulb: Incandescence From Hbn-Encapsulated Graphene In Air

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تاريخ النشر:

8 November 2017

موجز عن البحث:

The excellent electronic and mechanical properties of graphene allow it to sustain very large currents, enabling its incandescence through Joule heating in suspended devices. Although interesting scientifically and promising technologically, this process is unattainable in ambient environment, because graphene quickly oxidises at high temperatures. Here, we take the performance of graphene-based incandescent devices to the next level by encapsulating graphene with hexagonal boron nitride (hBN). Remarkably, we found that the hBN encapsulation provides an excellent protection for hot graphene filaments even at temperatures well above 2000 K. Unrivalled oxidation resistance of hBN combined with atomically clean graphene/hBN interface allows for a stable light emission from our devices in atmosphere for many hours of continuous operation. Furthermore, when confined in a simple photonic cavity, the thermal emission spectrum is modified by a cavity mode, shifting the emission to the visible range spectrum. We believe our results demonstrate that hBN/graphene heterostructures can be used to conveniently explore the technologically important high-temperature regime and to pave the way for future optoelectronic applications of graphene-based systems. 

 

 

البحث (2): 

 

عنوان البحث:

Tunneling In Graphene/H-BN/Graphene Heterostructures Through Zero-Dimensional Levels Of Defects In H-BN And Their Use As Probes To Measure The Density Of States Of Graphene 

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تاريخ النشر:

14 June 2019

موجز عن البحث:

The evolution of the manifestation of levels of defects in h-BN in tunneling through graphene/h-BN/graphene heterostructures with various degrees of perfection, from completely defectless to those with several tens of levels in the band gap of h-BN, has been studied. It has been shown that the behavior of these levels is related to the motion of Dirac points and the chemical potentials of graphene layers at change in the bias and gate voltages, which is described by the electrostatic model of an ideal defectless heterostructure. The density of states of graphene in a magnetic field has been studied by its probing by the level of a single defect with a sensitivity allowing the detection of splitting of the zeroth Landau level caused by the lifting of the spin and valley degeneracy already at B 4 T.