
مجال التميز |
تميز دراسي و بحثي |
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البحوث المنشورة |
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البحث (1): |
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عنوان البحث: |
Erbium-Doped Chalcogenide Glass Thin Film On Silicon Using Femtosecond Pulsed Laser With Different Deposition Temperatures |
رابط إلى البحث: |
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تاريخ النشر: |
05/12/2018 |
موجز عن البحث: |
The properties of Er3+-doped gallium lanthanum sulphide thin films prepared on a silicon substrate by femtosecond pulsed laser deposition were studied as a function of process temperature. The films were characterised using transition electron microscopy imaging, X-ray diffractometry, Raman spectroscopy, fluorescence spectroscopy, and UV–Vis–NIR spectroscopy. The results show that by increasing the substrate temperature, the deposited layer thickness increases and the crystallinity of the films changes. The room temperature photoluminescence and lifetimes of the 4I13/2→4I15/2 transition of Er3+ are reported in the paper. |
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المؤتمرات العلمية: |
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المؤتمر (1): |
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عنوان المؤتمر: |
Photon 2018 |
تاريخ الإنعقاد: |
03/09/2018 |
مكان الإنعقاد: |
Birmingham, UK |
طبيعة المشاركة: |
Poster presentation |
عنوان المشاركة: |
Structure And Optical Properties Of Er3+-Doped Gallium Lanthanum Sulfide (GLS) Thin Films Prepared By Femtosecond Pulsed Laser Deposition |
ملخص المشاركة: |
Thin films of Er3+-doped gallium lanthanum sulfide (GLS) glass were deposited on a single crystal Si(100) substrate using femtosecond pulsed laser deposition (fs-PLD) process. The film thickness, crystallinity and composition was studied as a function of substrate temperature. The deposited films were characterised by TEM- energy-dispersive X-ray spectrometry, X-ray diffraction, Raman, and Photoluminescence spectroscopy at room temperature. The results show that by increasing the substrate temperature the deposited layer thickness increases and crystallinity of the material changes. Increasing the substrate temperature enhances the crystallisation process. It is also observed that that amorphous and crystalline films with varying optical quality can be precisely engineered by careful variation in the fs-PLD process parameters. The room temperature photoluminescence spectrum and lifetimes of the 4I13 / 2→4I15 / 2 transition of Er3+ were measured at 1.54μm under 980 nm laser excitation. |
الرابط: |
المرفقات
- https://uksacb.org/wp-content/uploads/2019/03/Certificate-of-Photon-2018-conference.pdf
- https://uksacb.org/wp-content/uploads/2019/03/Invitation-letter-Kheir-_0.pdf
- https://uksacb.org/wp-content/uploads/2019/03/Certificate-of-Photon-2018-conference.pdf
- https://uksacb.org/wp-content/uploads/2019/03/Invitation-letter-Kheir-_0.pdf